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TK70D06J1(Q)

Toshiba Semiconductor and Storage
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 60V 70A TO220W
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Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220(W)

Technical

Operating Temperature 150°C TJ
Packaging Tube
Published 2008
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 45W Tc
Element Configuration Single
Power Dissipation 140W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6.4mOhm @ 35A, 10V
Vgs(th) (Max) @ Id 2.3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 5450pF @ 10V
Current - Continuous Drain (Id) @ 25°C 70A Ta
Gate Charge (Qg) (Max) @ Vgs 87nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 70A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Input Capacitance 5.45nF
Drain to Source Resistance 5.1mOhm
Rds On Max 6.4 mΩ

Compliance

RoHS Status RoHS Compliant
Lead Free Lead Free

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