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TPCA8010-H(TE12LQM

Toshiba Semiconductor and Storage
RoHS
/
Package 8-PowerVDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 200V 5.5A SOP-8 ADV
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Technical Details

Physical

Mounting Type Surface Mount
Package / Case 8-PowerVDFN

Technical

Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series π-MOSV
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 1.6W Ta 45W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 450m Ω @ 2.7A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 600pF @ 10V
Current - Continuous Drain (Id) @ 25°C 5.5A Ta
Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V

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