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SI7748DP-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package PowerPAK? SO-8
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET 30V 50A 56W 4.8mohm @ 10V
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Inventory: 37968
Minimum: 1
Total Price: USD $0.72
Unit Price: USD $0.716205
≥1 USD $0.716205
≥10 USD $0.588525
≥100 USD $0.569573
≥500 USD $0.551618
≥1000 USD $0.532665

Technical Details

Supply Chain

Factory Lead Time 13 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK? SO-8
Number of Pins 8
Weight 506.605978mg
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series SkyFET?, TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 4.8mOhm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 8
JESD-30 Code R-XDSO-C5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 4.8W Ta 56W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 4.8W
Case Connection DRAIN
Turn On Delay Time 36 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.8m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 2.7V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 3770pF @ 15V
Current - Continuous Drain (Id) @ 25°C 50A Tc
Gate Charge (Qg) (Max) @ Vgs 92nC @ 10V
Rise Time 16 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 16 ns
Turn-Off Delay Time 44 ns
Continuous Drain Current (ID) 50A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 23.5A
Drain to Source Breakdown Voltage 30V
Avalanche Energy Rating (Eas) 45 mJ

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Dimensions

Height 1.04mm
Length 4.9mm
Width 5.89mm

Alternative Model

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