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TPCA8105(TE12L,Q,M

Toshiba Semiconductor and Storage
RoHS
/
Package 8-PowerVDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 12V 6A SOP-8 ADV
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Inventory: 2003
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Technical Details

Physical

Mounting Type Surface Mount
Package / Case 8-PowerVDFN

Technical

Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2006
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 1.6W Ta 20W Tc
FET Type P-Channel
Rds On (Max) @ Id, Vgs 33m Ω @ 3A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 200μA
Input Capacitance (Ciss) (Max) @ Vds 1600pF @ 10V
Current - Continuous Drain (Id) @ 25°C 6A Ta
Gate Charge (Qg) (Max) @ Vgs 18nC @ 5V
Drain to Source Voltage (Vdss) 12V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V

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