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IRL3716STRRPBF

Infineon Technologies
RoHS
/
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 20V 180A D2PAK
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Technical Details

Physical

Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2004
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 210W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4m Ω @ 90A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5090pF @ 10V
Current - Continuous Drain (Id) @ 25°C 180A Tc
Gate Charge (Qg) (Max) @ Vgs 79nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V

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