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IRFSL4227PBF

Infineon Technologies
RoHS
/
Package TO-262-3 Long Leads, I2Pak, TO-262AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 200V 62A TO-262
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Inventory: 12338
Minimum: 1
Total Price: USD $3.01
Unit Price: USD $3.005468
≥1 USD $3.005468
≥10 USD $2.46582
≥100 USD $2.389013
≥500 USD $2.312205
≥1000 USD $2.2344

Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -40°C~175°C TJ
Packaging Tube
Published 2008
Series HEXFET?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Number of Elements 1
Power Dissipation-Max 330W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 330W
Case Connection DRAIN
Turn On Delay Time 33 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 26m Ω @ 46A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4600pF @ 25V
Current - Continuous Drain (Id) @ 25°C 62A Tc
Gate Charge (Qg) (Max) @ Vgs 98nC @ 10V
Rise Time 20 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 31 ns
Turn-Off Delay Time 21 ns
Continuous Drain Current (ID) 62A
Threshold Voltage 5V
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.026Ohm
Drain to Source Breakdown Voltage 200V
Pulsed Drain Current-Max (IDM) 260A
Avalanche Energy Rating (Eas) 140 mJ
Nominal Vgs 5 V

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant

Dimensions

Height 9.65mm
Length 10.67mm
Width 4.83mm

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