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APTM120UM95FAG

Microsemi Corporation
RoHS
/
Package SP6
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 1200V 103A SP6
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Technical Details

Physical

Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SP6
Number of Pins 6
Transistor Element Material SILICON

Technical

Operating Temperature -40°C~150°C TJ
Packaging Bulk
Published 2006
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish TIN SILVER COPPER
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 2
JESD-30 Code R-PUFM-X2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2272W Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 114m Ω @ 51.5A, 10V
Vgs(th) (Max) @ Id 5V @ 15mA
Input Capacitance (Ciss) (Max) @ Vds 30900pF @ 25V
Current - Continuous Drain (Id) @ 25°C 103A Tc
Gate Charge (Qg) (Max) @ Vgs 1122nC @ 10V
Drain to Source Voltage (Vdss) 1200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 103A
Gate to Source Voltage (Vgs) 30V
Avalanche Energy Rating (Eas) 3000 mJ

Compliance

RoHS Status RoHS Compliant
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