Operating Temperature -40°C~150°C TJ
Packaging Bulk
Published 2016
JESD-609 Code e1
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
Terminal Finish TIN SILVER COPPER
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 5
JESD-30 Code R-XUFM-X5
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1250W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.25kW
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 175m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 5V @ 10mA
Input Capacitance (Ciss) (Max) @ Vds 20600pF @ 25V
Current - Continuous Drain (Id) @ 25°C 60A Tc
Gate Charge (Qg) (Max) @ Vgs 748nC @ 10V
Drain to Source Voltage (Vdss) 1200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 60A
Gate to Source Voltage (Vgs) 30V
Pulsed Drain Current-Max (IDM) 240A
Avalanche Energy Rating (Eas) 3000 mJ