Operating Temperature -40°C~150°C TJ
Packaging Bulk
Published 2016
JESD-609 Code e1
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 12
Terminal Finish TIN SILVER COPPER
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 12
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE AND THERMISTOR
Power Dissipation-Max 694W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 694W
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 45m Ω @ 45A, 10V
Vgs(th) (Max) @ Id 5V @ 5mA
Input Capacitance (Ciss) (Max) @ Vds 11200pF @ 25V
Current - Continuous Drain (Id) @ 25°C 90A Tc
Gate Charge (Qg) (Max) @ Vgs 246nC @ 10V
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 90A
Gate to Source Voltage (Vgs) 30V
Pulsed Drain Current-Max (IDM) 360A
DS Breakdown Voltage-Min 500V
Avalanche Energy Rating (Eas) 2500 mJ