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IRF2903ZSTRLP

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 30V 75A D2PAK
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Inventory: 110286
Minimum: 1
Total Price: USD $2.5
Unit Price: USD $2.499735
≥1 USD $2.499735
≥10 USD $2.05086
≥100 USD $1.98702
≥500 USD $1.922183
≥1000 USD $1.858343

Technical Details

Supply Chain

Factory Lead Time 16 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2005
Series HEXFET?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 2.4MOhm
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 290W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 290W
Case Connection DRAIN
Turn On Delay Time 24 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.4m Ω @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 6320pF @ 25V
Current - Continuous Drain (Id) @ 25°C 75A Tc
Gate Charge (Qg) (Max) @ Vgs 240nC @ 10V
Rise Time 100ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 37 ns
Turn-Off Delay Time 48 ns
Continuous Drain Current (ID) 75A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 1020A
Avalanche Energy Rating (Eas) 820 mJ
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