Packaging Cut Tape (CT)
Published 2014
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 2.5W
Technology MOSFET (Metal Oxide)
Power Dissipation 2.5W
Turn On Delay Time 8.6 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 11mOhm @ 7.3A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1800pF @ 25V
Current - Continuous Drain (Id) @ 25°C 13A Ta
Gate Charge (Qg) (Max) @ Vgs 79nC @ 10V
Rise Time 50ns
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 46 ns
Turn-Off Delay Time 52 ns
Continuous Drain Current (ID) 13A
Gate to Source Voltage (Vgs) 20V
Input Capacitance 1.8nF
Drain to Source Resistance 18mOhm
Rds On Max 11 mΩ