Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2005
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Subcategory FET General Purpose Power
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 24A
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 1.36W Ta 62.5W Tj
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 62.5W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 42m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 25V
Current - Continuous Drain (Id) @ 25°C 24A Ta
Gate Charge (Qg) (Max) @ Vgs 48nC @ 10V
Rise Time 24ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 27 ns
Turn-Off Delay Time 25 ns
Continuous Drain Current (ID) 24A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 27A
Drain-source On Resistance-Max 0.042Ohm
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 80A
Avalanche Energy Rating (Eas) 162 mJ