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NTD3055L104

ON Semiconductor
RoHS
/
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 60V 12A DPAK
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Inventory: 32577
Minimum: 1
Total Price: USD $8.71
Unit Price: USD $8.71017
≥1 USD $8.71017
≥10 USD $7.147088
≥100 USD $6.923648
≥500 USD $6.700208
≥1000 USD $6.476768

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON

Compliance

RoHS Status Non-RoHS Compliant
Lead Free Contains Lead

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2005
JESD-609 Code e0
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
HTS Code 8541.29.00.95
Subcategory FET General Purpose Power
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 235
Reach Compliance Code not_compliant
Current Rating 25A
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Voltage 60V
Power Dissipation-Max 1.5W Ta 48W Tj
Element Configuration Single
Current 12A
Operating Mode ENHANCEMENT MODE
Power Dissipation 48W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 104m Ω @ 6A, 5V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 440pF @ 25V
Current - Continuous Drain (Id) @ 25°C 12A Ta
Gate Charge (Qg) (Max) @ Vgs 20nC @ 5V
Rise Time 104ns
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs (Max) ±15V
Fall Time (Typ) 40.5 ns
Turn-Off Delay Time 19 ns
Continuous Drain Current (ID) 12A
Gate to Source Voltage (Vgs) 15V
Drain-source On Resistance-Max 0.104Ohm
Drain to Source Breakdown Voltage 60V
Avalanche Energy Rating (Eas) 61 mJ

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