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NTD6600N-001

ON Semiconductor
RoHS
/
Package TO-251-3 Short Leads, IPak, TO-251AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 100V 12A IPAK
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Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2007
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated DC 100V
Technology MOSFET (Metal Oxide)
Current Rating 12A
Power Dissipation-Max 1.28W Ta 56.6W Tc
Element Configuration Single
Power Dissipation 56.6W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 146m Ω @ 6A, 5V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 700pF @ 25V
Current - Continuous Drain (Id) @ 25°C 12A Ta
Gate Charge (Qg) (Max) @ Vgs 20nC @ 5V
Rise Time 75ns
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs (Max) ±20V
Fall Time (Typ) 50 ns
Turn-Off Delay Time 26 ns
Continuous Drain Current (ID) 12A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V

Compliance

RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
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