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IXFK120N25
IXYSRoHS
/
Package TO-264-3, TO-264AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 250V 120A TO-264
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Number of Pins 3
Transistor Element Material SILICON
Compliance
RoHS Status RoHS Compliant
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2002
Series HiPerFET?
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 560W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 560W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 22m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 9400pF @ 25V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Gate Charge (Qg) (Max) @ Vgs 400nC @ 10V
Rise Time 38ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 35 ns
Turn-Off Delay Time 175 ns
Continuous Drain Current (ID) 120A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.022Ohm
Drain to Source Breakdown Voltage 250V
Pulsed Drain Current-Max (IDM) 480A
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