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SSM5H12TU(TE85L,F)

Toshiba Semiconductor and Storage
RoHS
/
Package 6-SMD (5 Leads), Flat Lead
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 30V 1.9A UFV
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Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-SMD (5 Leads), Flat Lead

Technical

Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series U-MOSIII
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Reach Compliance Code unknown
Power Dissipation-Max 500mW Ta
FET Type N-Channel
Rds On (Max) @ Id, Vgs 133m Ω @ 1A, 4V
Vgs(th) (Max) @ Id 1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 123pF @ 15V
Current - Continuous Drain (Id) @ 25°C 1.9A Ta
Gate Charge (Qg) (Max) @ Vgs 1.9nC @ 4V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4V
Vgs (Max) ±12V
Continuous Drain Current (ID) 1.9A
FET Feature Schottky Diode (Isolated)

Compliance

RoHS Status RoHS Compliant

Alternative Model

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