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NTD4913NT4G

ON Semiconductor
RoHS
/
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 30V 32A DPAK
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Inventory: 6366
Minimum: 1
Total Price: USD $6.43
Unit Price: USD $6.434873
≥1 USD $6.434873
≥10 USD $5.279768
≥100 USD $5.11518
≥500 USD $4.950593
≥1000 USD $4.785008

Technical Details

Supply Chain

Lifecycle Status LAST SHIPMENTS (Last Updated: 1 day ago)

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 4
Transistor Element Material SILICON

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2010
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1.36W Ta 24W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Case Connection DRAIN
Turn On Delay Time 10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 10.5m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1013pF @ 15V
Current - Continuous Drain (Id) @ 25°C 7.7A Ta 32A Tc
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
Rise Time 21ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 2.3 ns
Turn-Off Delay Time 14.7 ns
Continuous Drain Current (ID) 10.5A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 7.7A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 22 mJ

Alternative Model

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