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IRFH5020TR2PBF

Infineon Technologies
RoHS
/
Package 8-PowerVDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 200V 5.1A 8VQFN
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Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8
Supplier Device Package 8-PQFN (5x6)

Dimensions

Height 838.2μm
Length 5.9944mm
Width 5mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free

Technical

Packaging Cut Tape (CT)
Published 2013
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 55MOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 3.6W
Technology MOSFET (Metal Oxide)
Number of Elements 1
Element Configuration Single
Power Dissipation 8.3W
Turn On Delay Time 9.3 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 55mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id 5V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 2290pF @ 100V
Current - Continuous Drain (Id) @ 25°C 5.1A Ta
Gate Charge (Qg) (Max) @ Vgs 54nC @ 10V
Rise Time 7.7ns
Drain to Source Voltage (Vdss) 200V
Fall Time (Typ) 6 ns
Turn-Off Delay Time 21 ns
Continuous Drain Current (ID) 43A
Threshold Voltage 5V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 200V
Input Capacitance 2.29nF
Recovery Time 69 ns
Drain to Source Resistance 55mOhm
Rds On Max 55 mΩ
Nominal Vgs 5 V

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