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IRFH5004TR2PBF

Infineon Technologies
RoHS
/
Package 8-PowerVDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 40V 28A 8VQFN
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Inventory: 5792
Minimum: 1
Total Price: USD $9.74
Unit Price: USD $9.737043
≥1 USD $9.737043
≥10 USD $9.185884
≥100 USD $8.665925
≥500 USD $8.175406
≥1000 USD $7.712637

Technical Details

Technical

Packaging Cut Tape (CT)
Published 2010
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 3.6W
Technology MOSFET (Metal Oxide)
Number of Elements 1
Element Configuration Single
Power Dissipation 3.6W
Turn On Delay Time 13 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.6mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 4490pF @ 20V
Current - Continuous Drain (Id) @ 25°C 28A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Rise Time 13ns
Drain to Source Voltage (Vdss) 40V
Fall Time (Typ) 28 ns
Turn-Off Delay Time 28 ns
Continuous Drain Current (ID) 100A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 40V
Input Capacitance 4.29nF
Recovery Time 48 ns
Drain to Source Resistance 2.6mOhm
Rds On Max 2.6 mΩ
Nominal Vgs 4 V

Dimensions

Height 838.2μm
Length 5.9944mm
Width 5mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant

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