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TPCC8003-H(TE12LQM

Toshiba Semiconductor and Storage
RoHS
/
Package 8-PowerVDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 30V 13A 8TSON
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Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8
Supplier Device Package 8-TSON Advance (3.3x3.3)

Technical

Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series U-MOSVI-H
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 700mW Ta 22W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 16.9mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id 2.3V @ 200μA
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 10V
Current - Continuous Drain (Id) @ 25°C 13A Ta
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Rise Time 2.2ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 2.7 ns
Continuous Drain Current (ID) 13A
Gate to Source Voltage (Vgs) 20V
Input Capacitance 1.3nF
Rds On Max 16.9 mΩ

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant

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