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TK13A65U(STA4,Q,M)

Toshiba Semiconductor and Storage
RoHS
RoHS RoHS compliant
Package TO-220-3 Full Pack
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 650V 13A TO-220SIS
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Inventory: 6736
Minimum: 2500
Total Price: USD $20446.26
Unit Price: USD $8.178503
≥2500 USD $8.178503

Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Supplier Device Package TO-220SIS

Technical

Operating Temperature 150°C TJ
Packaging Tube
Published 2009
Series DTMOSII
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 40W Tc
Power Dissipation 40W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 380mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 950pF @ 10V
Current - Continuous Drain (Id) @ 25°C 13A Ta
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Rise Time 30ns
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 8 ns
Continuous Drain Current (ID) 13A
Gate to Source Voltage (Vgs) 30V
Input Capacitance 950pF
Rds On Max 380 mΩ

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant

Alternative Model

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