EPC2007

EPC

RoHS

Package Die

Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Description TRANS GAN 100V 6A BUMPED DIE

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Technical Details

Physical

Mount Surface Mount

Mounting Type Surface Mount

Package / Case Die

Supplier Device Package Die Outline (5-Solder Bar)

Technical

Operating Temperature -40°C~125°C TJ

Packaging Cut Tape (CT)

Published 2013

Series eGaN?

Part Status Obsolete

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Technology GaNFET (Gallium Nitride)

FET Type N-Channel

Rds On (Max) @ Id, Vgs 30mOhm @ 6A, 5V

Vgs(th) (Max) @ Id 2.5V @ 1.2mA

Input Capacitance (Ciss) (Max) @ Vds 205pF @ 50V

Current - Continuous Drain (Id) @ 25°C 6A Ta

Gate Charge (Qg) (Max) @ Vgs 2.8nC @ 5V

Drain to Source Voltage (Vdss) 100V

Drive Voltage (Max Rds On,Min Rds On) 5V

Vgs (Max) +6V, -5V

Continuous Drain Current (ID) 6A

Input Capacitance 205pF

Rds On Max 30 mΩ

Compliance

RoHS Status RoHS Compliant

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