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RoHS
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Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 60V 195A TO-220AB
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Inventory: 10330
Minimum: 1
Total Price: USD $9.88
Unit Price: USD $9.876248
≥1 USD $9.876248
≥10 USD $8.10369
≥100 USD $7.850325
≥500 USD $7.59696
≥1000 USD $7.344593

Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220AB

Dimensions

Height 15.24mm
Length 10.5156mm
Width 4.69mm

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2009
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 380W Tc
Element Configuration Single
Power Dissipation 380W
Turn On Delay Time 66 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.4mOhm @ 165A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 11210pF @ 50V
Current - Continuous Drain (Id) @ 25°C 195A Tc
Gate Charge (Qg) (Max) @ Vgs 140nC @ 4.5V
Rise Time 220ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 110 ns
Turn-Off Delay Time 110 ns
Continuous Drain Current (ID) 195A
Gate to Source Voltage (Vgs) 16V
Drain to Source Breakdown Voltage 60V
Input Capacitance 11.21nF
Drain to Source Resistance 2.8mOhm
Rds On Max 2.4 mΩ
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