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DMN2065UW-7

Diodes Incorporated
RoHS
RoHS RoHS compliant
Package SC-70, SOT-323
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N CH 20V 2.8A SOT323
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Inventory: 12515
Minimum: 1
Total Price: USD $0.35
Unit Price: USD $0.35112
≥1 USD $0.35112
≥10 USD $0.247632
≥100 USD $0.125017
≥500 USD $0.110807
≥1000 USD $0.086228

Technical Details

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3
Weight 6.010099mg
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 430mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 430mW
Turn On Delay Time 3.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 56m Ω @ 2A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 400pF @ 10V
Current - Continuous Drain (Id) @ 25°C 2.8A Ta
Gate Charge (Qg) (Max) @ Vgs 5.4nC @ 4.5V
Rise Time 9.7 ns
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 7.2 ns
Turn-Off Delay Time 23.8 ns
Continuous Drain Current (ID) 2.8A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 2.2A
Drain-source On Resistance-Max 0.065Ohm
Drain to Source Breakdown Voltage 20V
Max Junction Temperature (Tj) 150°C

Dimensions

Height 1.1mm
Length 2.2mm
Width 1.35mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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