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DMN2065UW-7

Diodes Incorporated
RoHS
RoHS RoHS compliant
Package SC-70, SOT-323
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N CH 20V 2.8A SOT323
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Inventory: 12515
Minimum: 1
Total Price: USD $0.35
Unit Price: USD $0.35112
≥1 USD $0.35112
≥10 USD $0.247632
≥100 USD $0.125017
≥500 USD $0.110807
≥1000 USD $0.086228

Technical Details

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3
Weight 6.010099mg
Transistor Element Material SILICON

Dimensions

Height 1.1mm
Length 2.2mm
Width 1.35mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 430mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 430mW
Turn On Delay Time 3.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 56m Ω @ 2A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 400pF @ 10V
Current - Continuous Drain (Id) @ 25°C 2.8A Ta
Gate Charge (Qg) (Max) @ Vgs 5.4nC @ 4.5V
Rise Time 9.7 ns
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 7.2 ns
Turn-Off Delay Time 23.8 ns
Continuous Drain Current (ID) 2.8A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 2.2A
Drain-source On Resistance-Max 0.065Ohm
Drain to Source Breakdown Voltage 20V
Max Junction Temperature (Tj) 150°C

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