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NTDV20N06LT4G

ON Semiconductor
RoHS
RoHS RoHS compliant
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description Trans MOSFET N-CH 60V 20A 3-Pin(2+Tab) DPAK T/R
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Inventory: 8873
Minimum: 1
Total Price: USD $0.46
Unit Price: USD $0.464569
≥1 USD $0.464569
≥200 USD $0.18059
≥500 USD $0.173696
≥1000 USD $0.17094

Technical Details

Physical

Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Pin Count 3
Reference Standard AEC-Q101
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 1.36W Ta 60W Tj
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 9.6 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 48m Ω @ 10A, 5V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 990pF @ 25V
Current - Continuous Drain (Id) @ 25°C 20A Ta
Gate Charge (Qg) (Max) @ Vgs 32nC @ 5V
Rise Time 98 ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs (Max) ±15V
Fall Time (Typ) 62 ns
Turn-Off Delay Time 25 ns
Continuous Drain Current (ID) 20A
Gate to Source Voltage (Vgs) 15V
Drain-source On Resistance-Max 0.048Ohm
Pulsed Drain Current-Max (IDM) 60A
DS Breakdown Voltage-Min 60V
Avalanche Energy Rating (Eas) 128 mJ

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Supply Chain

Factory Lead Time 22 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)

Alternative Model

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