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IRF6811STR1PBF

Infineon Technologies
RoHS
/
Package DirectFET? Isometric SQ
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N CH 25V 19A DIRECTFET
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Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET? Isometric SQ
Number of Pins 6
Supplier Device Package DIRECTFET? SQ

Technical

Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 3.7MOhm
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 2.1W Ta 32W Tc
Power Dissipation 2.1W
Turn On Delay Time 8.7 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.7mOhm @ 19A, 10V
Vgs(th) (Max) @ Id 2.1V @ 35μA
Input Capacitance (Ciss) (Max) @ Vds 1590pF @ 13V
Current - Continuous Drain (Id) @ 25°C 19A Ta 74A Tc
Gate Charge (Qg) (Max) @ Vgs 17nC @ 4.5V
Rise Time 19ns
Drain to Source Voltage (Vdss) 25V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 5.5 ns
Turn-Off Delay Time 11 ns
Continuous Drain Current (ID) 74A
Gate to Source Voltage (Vgs) 16V
Drain to Source Breakdown Voltage 25V
Input Capacitance 1.59nF
Drain to Source Resistance 5.4mOhm
Rds On Max 3.7 mΩ

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

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