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IRF6894MTR1PBF
Infineon TechnologiesRoHS
/
Package DirectFET? Isometric MX
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 25V 32A DIRECTFET
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET? Isometric MX
Number of Pins 7
Supplier Device Package DIRECTFET? MX
Technical
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 1.3MOhm
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 2.1W Ta 54W Tc
Power Dissipation 2.1W
Turn On Delay Time 16 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.3mOhm @ 33A, 10V
Vgs(th) (Max) @ Id 2.1V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 4160pF @ 13V
Current - Continuous Drain (Id) @ 25°C 32A Ta 160A Tc
Gate Charge (Qg) (Max) @ Vgs 39nC @ 4.5V
Rise Time 42ns
Drain to Source Voltage (Vdss) 25V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 14 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 32A
Gate to Source Voltage (Vgs) 16V
Drain to Source Breakdown Voltage 25V
Input Capacitance 4.16nF
FET Feature Schottky Diode (Body)
Drain to Source Resistance 1.7mOhm
Rds On Max 1.3 mΩ
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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