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IRLH6224TR2PBF

Infineon Technologies
RoHS
/
Package 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N CH 20V 28A PQFN 5X6 MM
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Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Supplier Device Package 8-PQFN (5x6)

Technical

Packaging Cut Tape (CT)
Published 2013
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 3MOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 3.6W
Technology MOSFET (Metal Oxide)
Power Dissipation 3.6W
Turn On Delay Time 9.4 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3mOhm @ 20A, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 3710pF @ 10V
Current - Continuous Drain (Id) @ 25°C 28A Ta 105A Tc
Gate Charge (Qg) (Max) @ Vgs 86nC @ 10V
Rise Time 23ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 36 ns
Turn-Off Delay Time 67 ns
Continuous Drain Current (ID) 28A
Threshold Voltage 800mV
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 20V
Input Capacitance 3.71nF
Recovery Time 57 ns
Drain to Source Resistance 3mOhm
Rds On Max 3 mΩ
Nominal Vgs 800 mV

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free

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