2N7636-GA

GeneSiC Semiconductor

RoHS

Package TO-276AA

Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Description Bipolar Transistors - BJT SiC High Temp SJT 650V 4A 225 Degree C

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Inventory: 3477

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Technical Details

Supply Chain

Factory Lead Time 18 Weeks

Physical

Mount Surface Mount

Mounting Type Surface Mount

Package / Case TO-276AA

Number of Pins 3

Technical

Operating Temperature -55°C~225°C TJ

Packaging Tube

Published 2013

Part Status Obsolete

Moisture Sensitivity Level (MSL) 1 (Unlimited)

ECCN Code EAR99

Subcategory Other Transistors

Technology SiC (Silicon Carbide Junction Transistor)

Power Dissipation-Max 125W Tc

Rds On (Max) @ Id, Vgs 415m Ω @ 4A

Input Capacitance (Ciss) (Max) @ Vds 324pF @ 35V

Current - Continuous Drain (Id) @ 25°C 4A Tc 165°C

Drain to Source Voltage (Vdss) 650V

Polarity/Channel Type N-CHANNEL

Continuous Drain Current (ID) 4A

Compliance

RoHS Status Non-RoHS Compliant

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