IXTA02N450HV

IXYS

RoHS

Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Description Trans MOSFET N-CH 4.5KV 0.2A 3-Pin(2+Tab) TO-263

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Technical Details

Physical

Mount Surface Mount

Mounting Type Surface Mount

Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Compliance

RoHS Status RoHS Compliant

Technical

Operating Temperature -55°C~150°C TJ

Packaging Tube

Published 2012

JESD-609 Code e3

Part Status Obsolete

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Terminal Finish Matte Tin (Sn)

Subcategory FET General Purpose Power

Technology MOSFET (Metal Oxide)

Number of Elements 1

Power Dissipation-Max 113W Tc

Element Configuration Single

Power Dissipation 113W

FET Type N-Channel

Rds On (Max) @ Id, Vgs 750 Ω @ 10mA, 10V

Vgs(th) (Max) @ Id 6.5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds 256pF @ 25V

Current - Continuous Drain (Id) @ 25°C 200mA Tc

Gate Charge (Qg) (Max) @ Vgs 10.4nC @ 10V

Rise Time 48ns

Drain to Source Voltage (Vdss) 4500V

Drive Voltage (Max Rds On,Min Rds On) 10V

Vgs (Max) ±20V

Fall Time (Typ) 143 ns

Turn-Off Delay Time 28 ns

Continuous Drain Current (ID) 200mA

Gate to Source Voltage (Vgs) 20V

Drain Current-Max (Abs) (ID) 0.2A

Drain to Source Breakdown Voltage 4.5kV

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