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SI4836DY-T1-E3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description Trans MOSFET N-CH 12V 17A 8-Pin SOIC N T/R
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Inventory: 3681
Minimum: 1
Total Price: USD $0.19
Unit Price: USD $0.187851
≥1 USD $0.187851
≥10 USD $0.182326
≥100 USD $0.176801
≥500 USD $0.169894

Technical Details

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2017
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 3mOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
Number of Elements 1
Power Dissipation-Max 1.6W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.6W
Turn On Delay Time 35 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3m Ω @ 25A, 4.5V
Vgs(th) (Max) @ Id 400mV @ 250μA (Min)
Current - Continuous Drain (Id) @ 25°C 17A Ta
Gate Charge (Qg) (Max) @ Vgs 75nC @ 4.5V
Rise Time 41 ns
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 115 ns
Turn-Off Delay Time 190 ns
Continuous Drain Current (ID) 17A
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage 12V
Input Capacitance 860pF

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

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