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SPD07N20GBTMA1

Infineon Technologies
RoHS
/
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description Trans MOSFET N-CH 200V 7A 3-Pin(2+Tab) TO-252 T/R
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Inventory: 6568
Minimum: 1
Total Price: USD $1.53
Unit Price: USD $1.530165
≥1 USD $1.530165
≥10 USD $1.255853
≥100 USD $1.21695
≥500 USD $1.17705
≥1000 USD $1.138148

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2005
Series SIPMOS?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 40W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 40W
Turn On Delay Time 10 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 400m Ω @ 4.5A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Halogen Free Not Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 530pF @ 25V
Current - Continuous Drain (Id) @ 25°C 7A Tc
Gate Charge (Qg) (Max) @ Vgs 31.5nC @ 10V
Rise Time 40 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 30 ns
Turn-Off Delay Time 55 ns
Continuous Drain Current (ID) 7A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 200V
Drain Current-Max (Abs) (ID) 7A
Drain-source On Resistance-Max 0.4Ohm
Pulsed Drain Current-Max (IDM) 28A

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Contains Lead

Alternative Model

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