Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2016
Series TrenchFET?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 32mOhm
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
JESD-30 Code S-PDSO-N3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 2.4W Ta 13W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.4W
Case Connection DRAIN
Turn On Delay Time 19 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 32m Ω @ 3A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 878pF @ 4V
Current - Continuous Drain (Id) @ 25°C 9A Tc
Gate Charge (Qg) (Max) @ Vgs 18.5nC @ 5V
Rise Time 27ns
Drive Voltage (Max Rds On,Min Rds On) 1.2V 4.5V
Vgs (Max) ±5V
Fall Time (Typ) 29 ns
Turn-Off Delay Time 32 ns
Continuous Drain Current (ID) 9A
Gate to Source Voltage (Vgs) 5V
Drain Current-Max (Abs) (ID) 9A
Drain to Source Breakdown Voltage 8V