VN10KN3-G-P014

Microchip Technology

RoHS

RoHS compliant

Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Description MOSFET N-CH Enhancmnt Mode MOSFET

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Technical Details

Supply Chain

Factory Lead Time 6 Weeks

Physical

Mount Through Hole

Mounting Type Through Hole

Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Weight 453.59237mg

Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ

Packaging Tape & Box (TB)

Published 2013

Part Status Active

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Number of Terminations 3

ECCN Code EAR99

Subcategory FET General Purpose Power

Technology MOSFET (Metal Oxide)

Terminal Position BOTTOM

Peak Reflow Temperature (Cel) NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

JESD-30 Code O-PBCY-T3

Number of Elements 1

Number of Channels 1

Power Dissipation-Max 1W Tc

Element Configuration Single

Operating Mode ENHANCEMENT MODE

FET Type N-Channel

Transistor Application SWITCHING

Rds On (Max) @ Id, Vgs 5 Ω @ 500mA, 10V

Vgs(th) (Max) @ Id 2.5V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds 60pF @ 25V

Current - Continuous Drain (Id) @ 25°C 310mA Tj

Drain to Source Voltage (Vdss) 60V

Drive Voltage (Max Rds On,Min Rds On) 5V 10V

Vgs (Max) ±30V

Continuous Drain Current (ID) 310mA

Gate to Source Voltage (Vgs) 30V

Drain-source On Resistance-Max 5Ohm

DS Breakdown Voltage-Min 60V

Feedback Cap-Max (Crss) 5 pF

Dimensions

Height 5.33mm

Length 5.21mm

Width 4.19mm

Compliance

RoHS Status ROHS3 Compliant

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