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IPD65R1K4CFDBTMA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description Trans MOSFET N-CH 700V 2.8A T/R
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Technical Details

Supply Chain

Factory Lead Time 16 Weeks

Compliance

RoHS Status ROHS3 Compliant

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3

Technical

Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2003
Series CoolMOS?
Pbfree Code no
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 28.4W Tc
Turn On Delay Time 8 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.4 Ω @ 1A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 262pF @ 100V
Current - Continuous Drain (Id) @ 25°C 2.8A Tc
Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V
Rise Time 6ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 18.2 ns
Turn-Off Delay Time 33 ns
Continuous Drain Current (ID) 2.8A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 650V
Drain to Source Breakdown Voltage 700V

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