Operating Temperature -55°C~150°C TJ
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G8
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 3.1W Ta
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.9m Ω @ 20A, 4.5V
Vgs(th) (Max) @ Id 1.25V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3300pF @ 10V
Current - Continuous Drain (Id) @ 25°C 20A Ta
Gate Charge (Qg) (Max) @ Vgs 45nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Drain Current-Max (Abs) (ID) 20A
Drain-source On Resistance-Max 0.0059Ohm
DS Breakdown Voltage-Min 20V