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IPD30N03S2L10ATMA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 30V 30A TO252-3
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Inventory: 5059
Minimum: 1
Total Price: USD $2.26
Unit Price: USD $2.255348
≥1 USD $2.255348
≥10 USD $1.85136
≥100 USD $1.793505
≥500 USD $1.73565
≥1000 USD $1.677795

Technical Details

Supply Chain

Factory Lead Time 10 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2006
Series OptiMOS?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 100W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 7 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 10m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2V @ 50μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 25V
Current - Continuous Drain (Id) @ 25°C 30A Tc
Gate Charge (Qg) (Max) @ Vgs 42nC @ 10V
Rise Time 21 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 29 ns
Continuous Drain Current (ID) 30A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 30V
Drain-source On Resistance-Max 0.0146Ohm
Pulsed Drain Current-Max (IDM) 120A
Avalanche Energy Rating (Eas) 150 mJ

Compliance

RoHS Status ROHS3 Compliant
Lead Free Contains Lead

Alternative Model

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