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IXFN62N80Q3

IXYS
RoHS
RoHS RoHS compliant
Package SOT-227-4, miniBLOC
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 800V 49A SOT-227
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Inventory: 1086
Minimum: 1
Total Price: USD $56.38
Unit Price: USD $56.380695
≥1 USD $56.380695
≥10 USD $46.261058
≥100 USD $44.81568
≥500 USD $43.370303
≥1000 USD $41.923928
≥3000 USD $37.587795

Technical Details

Supply Chain

Factory Lead Time 30 Weeks

Physical

Mount Chassis Mount, Panel
Mounting Type Chassis Mount
Package / Case SOT-227-4, miniBLOC
Number of Pins 4
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2012
Series HiPerFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Resistance 140MOhm
Additional Feature UL RECOGNIZED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 4
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 960W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 960W
Case Connection ISOLATED
Turn On Delay Time 54 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 140m Ω @ 31A, 10V
Vgs(th) (Max) @ Id 6.5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 13600pF @ 25V
Current - Continuous Drain (Id) @ 25°C 49A Tc
Gate Charge (Qg) (Max) @ Vgs 270nC @ 10V
Rise Time 300 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Turn-Off Delay Time 62 ns
Continuous Drain Current (ID) 49A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 800V
Pulsed Drain Current-Max (IDM) 180A
Avalanche Energy Rating (Eas) 5000 mJ

Dimensions

Height 9.6mm
Length 38.23mm
Width 25.07mm

Compliance

RoHS Status ROHS3 Compliant
Lead Free Lead Free

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