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IPP065N04N G

Rochester Electronics, LLC
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description N-CHANNEL POWER MOSFET
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Technical Details

Physical

Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package PG-TO220-3

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tube
Series OptiMOS?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 68W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 200μA
Input Capacitance (Ciss) (Max) @ Vds 2.8pF @ 20V
Current - Continuous Drain (Id) @ 25°C 50A Tc
Gate Charge (Qg) (Max) @ Vgs 34nC @ 10V
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V

Compliance

RoHS Status Non-RoHS Compliant

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