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IPW50R190CEFKSA1

Rochester Electronics, LLC
RoHS
RoHS RoHS compliant
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description N-CHANNEL POWER MOSFET
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Technical Details

Physical

Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package PG-TO247-3

Compliance

RoHS Status ROHS3 Compliant

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Series CoolMOS?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 127W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 190mOhm @ 6.2A, 13V
Vgs(th) (Max) @ Id 3.5V @ 510μA
Input Capacitance (Ciss) (Max) @ Vds 1.137pF @ 100V
Current - Continuous Drain (Id) @ 25°C 18.5A Tc
Gate Charge (Qg) (Max) @ Vgs 47.2nC @ 10V
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 13V
Vgs (Max) ±20V
FET Feature Super Junction

Alternative Model

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