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IPD60R950C6ATMA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description INFINEON IPD60R950C6 Power MOSFET, N Channel, 4.4 A, 600 V, 0.86 ohm, 10 V, 3 V
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Inventory: 4837
Minimum: 1
Total Price: USD $0.36
Unit Price: USD $0.357129
≥1 USD $0.357129
≥10 USD $0.346625
≥100 USD $0.336121
≥500 USD $0.322991

Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 3.949996g
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series CoolMOS? C6
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 37W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 37W
Case Connection DRAIN
Turn On Delay Time 10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 950m Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id 3.5V @ 130μA
Input Capacitance (Ciss) (Max) @ Vds 280pF @ 100V
Current - Continuous Drain (Id) @ 25°C 4.4A Tc
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
Rise Time 8 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 13 ns
Turn-Off Delay Time 60 ns
Continuous Drain Current (ID) 4.4A
Gate to Source Voltage (Vgs) 30V
Max Dual Supply Voltage 600V
Drain-source On Resistance-Max 0.95Ohm
Drain to Source Breakdown Voltage 600V
Avalanche Energy Rating (Eas) 46 mJ

Compliance

RoHS Status ROHS3 Compliant
Lead Free Lead Free

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