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IPB70N04S406ATMA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 40V 70A TO263-3-2
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Inventory: 998
Minimum: 1
Total Price: USD $0.24
Unit Price: USD $0.242041
≥1 USD $0.242041
≥10 USD $0.234922
≥100 USD $0.227803
≥500 USD $0.218905

Technical Details

Supply Chain

Factory Lead Time 16 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series OptiMOS?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 58W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 8 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6.2m Ω @ 70A, 10V
Vgs(th) (Max) @ Id 4V @ 26μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 2550pF @ 25V
Current - Continuous Drain (Id) @ 25°C 70A Tc
Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V
Rise Time 10ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 9 ns
Turn-Off Delay Time 7 ns
Continuous Drain Current (ID) 70A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 40V
Drain-source On Resistance-Max 0.0062Ohm
Pulsed Drain Current-Max (IDM) 280A
Avalanche Energy Rating (Eas) 72 mJ

Compliance

RoHS Status ROHS3 Compliant
Lead Free Contains Lead
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