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BSC190N12NS3GATMA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description Trans MOSFET N-CH 120V 8.6A 8-Pin TDSON EP
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Inventory: 7112
Minimum: 1
Total Price: USD $0.56
Unit Price: USD $0.559903
≥1 USD $0.559903
≥10 USD $0.543435
≥100 USD $0.526967
≥500 USD $0.506383

Technical Details

Supply Chain

Factory Lead Time 26 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series OptiMOS?
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
JESD-30 Code R-PDSO-F5
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 69W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 69W
Case Connection DRAIN
Turn On Delay Time 17 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 19m Ω @ 39A, 10V
Vgs(th) (Max) @ Id 4V @ 42μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 2300pF @ 60V
Current - Continuous Drain (Id) @ 25°C 8.6A Ta 44A Tc
Gate Charge (Qg) (Max) @ Vgs 34nC @ 10V
Rise Time 16 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 4 ns
Turn-Off Delay Time 22 ns
Continuous Drain Current (ID) 8.6A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 120V
Avalanche Energy Rating (Eas) 60 mJ

Compliance

RoHS Status ROHS3 Compliant
Lead Free Contains Lead

Alternative Model

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