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IPD90P03P404ATMA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description Trans MOSFET P-CH 30V 90A 3-Pin(2+Tab) TO-252
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Inventory: 13421
Minimum: 1
Total Price: USD $0.82
Unit Price: USD $0.817326
≥1 USD $0.817326
≥10 USD $0.793287
≥100 USD $0.769248
≥500 USD $0.739199

Technical Details

Supply Chain

Factory Lead Time 26 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series OptiMOS?
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reference Standard AEC-Q101
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 137W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 35 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 4.5m Ω @ 90A, 10V
Vgs(th) (Max) @ Id 4V @ 253μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 10300pF @ 25V
Current - Continuous Drain (Id) @ 25°C 90A Tc
Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V
Rise Time 10 ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 70 ns
Continuous Drain Current (ID) 90A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage -30V
Drain-source On Resistance-Max 0.0045Ohm

Compliance

RoHS Status ROHS3 Compliant
Lead Free Contains Lead

Alternative Model

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