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BSC009NE2LS5IATMA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 25V 40A 8TDSON IND
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Inventory: 1400
Minimum: 1
Total Price: USD $0.73
Unit Price: USD $0.731703
≥1 USD $0.731703
≥10 USD $0.710182
≥100 USD $0.688661
≥500 USD $0.66176

Technical Details

Supply Chain

Factory Lead Time 26 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series OptiMOS?
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-F5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 2.5W Ta 74W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Case Connection DRAIN
Turn On Delay Time 5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 0.95m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 3200pF @ 12V
Current - Continuous Drain (Id) @ 25°C 40A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs 49nC @ 10V
Rise Time 33 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 19 ns
Turn-Off Delay Time 27 ns
Continuous Drain Current (ID) 40A
Gate to Source Voltage (Vgs) 16V
Max Dual Supply Voltage 25V
Drain to Source Breakdown Voltage 25V
Pulsed Drain Current-Max (IDM) 400A
Avalanche Energy Rating (Eas) 50 mJ
Max Junction Temperature (Tj) 150°C

Dimensions

Height 1.1mm

Compliance

RoHS Status ROHS3 Compliant
Lead Free Contains Lead

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