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NTP8G206NG

Rochester Electronics, LLC
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description POWER FIELD-EFFECT TRANSISTOR
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Technical Details

Physical

Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology GaNFET (Gallium Nitride)
Power Dissipation-Max 96W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 180mOhm @ 11A, 8V
Vgs(th) (Max) @ Id 2.6V @ 500μA
Input Capacitance (Ciss) (Max) @ Vds 760pF @ 480V
Current - Continuous Drain (Id) @ 25°C 17A Tc
Gate Charge (Qg) (Max) @ Vgs 9.3nC @ 4.5V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 8V
Vgs (Max) ±18V

Compliance

RoHS Status Non-RoHS Compliant

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