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SQ2309ES-T1_GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package TO-236-3, SC-59, SOT-23-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description VISHAY - SQ2309ES-T1_GE3 - Power MOSFET, P Channel, 60 V, 2.3 A, 0.125 ohm, SOT-23, Surface Mount
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Inventory: 67
Minimum: 1
Total Price: USD $0.06
Unit Price: USD $0.062349
≥1 USD $0.062349
≥10 USD $0.060516
≥100 USD $0.058682
≥500 USD $0.05639

Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Physical

Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package TO-236 (SOT-23)

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series Automotive, AEC-Q101, TrenchFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 2W Tc
FET Type P-Channel
Rds On (Max) @ Id, Vgs 336mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 265pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.7A Tc
Gate Charge (Qg) (Max) @ Vgs 8.5nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Drain to Source Resistance 125mOhm

Compliance

RoHS Status ROHS3 Compliant

Alternative Model

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