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IPB180N10S402ATMA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-263-7, D2Pak (6 Leads + Tab)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description Trans MOSFET N-CH 100V 180A Automotive 7-Pin(6+Tab) D2PAK T/R
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Inventory: 1061
Minimum: 1
Total Price: USD $2.48
Unit Price: USD $2.476741
≥1 USD $2.476741
≥10 USD $2.403895
≥100 USD $2.33105
≥500 USD $2.239993

Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-7, D2Pak (6 Leads + Tab)
Transistor Element Material SILICON

Compliance

RoHS Status ROHS3 Compliant
Lead Free Contains Lead

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series Automotive, AEC-Q101, OptiMOS?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G6
Number of Elements 1
Power Dissipation-Max 300W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Case Connection DRAIN
Turn On Delay Time 15 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.5m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 3.5V @ 275μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 14600pF @ 25V
Current - Continuous Drain (Id) @ 25°C 180A Tc
Gate Charge (Qg) (Max) @ Vgs 200nC @ 10V
Rise Time 9ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 40 ns
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) 180A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 100V
Drain-source On Resistance-Max 0.0025Ohm
Pulsed Drain Current-Max (IDM) 720A

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