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SIS413DN-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package PowerPAK? 1212-8
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description Transistor MOSFET P-CH 30V 18A 8-Pin PowerPAK 1212
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Inventory: 44663
Minimum: 1
Total Price: USD $0.07
Unit Price: USD $0.070852
≥1 USD $0.070852
≥10 USD $0.068769
≥100 USD $0.066685
≥500 USD $0.06408

Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Technical

Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2015
Series TrenchFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
JESD-30 Code S-PDSO-C5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3.7W Ta 52W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.7W
Case Connection DRAIN
Turn On Delay Time 11 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 9.4m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4280pF @ 15V
Current - Continuous Drain (Id) @ 25°C 18A Tc
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Rise Time 11 ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 8 ns
Turn-Off Delay Time 45 ns
Continuous Drain Current (ID) -14.7A
Threshold Voltage -2.5V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0094Ohm
Drain to Source Breakdown Voltage -30V
Pulsed Drain Current-Max (IDM) 70A
Avalanche Energy Rating (Eas) 20 mJ
Max Junction Temperature (Tj) 150°C

Dimensions

Height 1.17mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK? 1212-8
Number of Pins 8
Transistor Element Material SILICON

Alternative Model

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