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DMT10H009LCG-7

Diodes Incorporated
RoHS
RoHS RoHS compliant
Package 8-PowerVDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET BVDSS: 61V-100V V-DFN3333
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Inventory: 2398
Minimum: 1
Total Price: USD $1.1
Unit Price: USD $1.09956
≥1 USD $1.09956
≥10 USD $0.89628
≥100 USD $0.697066
≥500 USD $0.590879
≥1000 USD $0.481331

Technical Details

Supply Chain

Factory Lead Time 19 Weeks

Physical

Mounting Type Surface Mount
Package / Case 8-PowerVDFN

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e4
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Power Dissipation-Max 1W Ta
FET Type N-Channel
Rds On (Max) @ Id, Vgs 8.8m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2309pF @ 50V
Current - Continuous Drain (Id) @ 25°C 12.4A Ta 47A Tc
Gate Charge (Qg) (Max) @ Vgs 20.2nC @ 4.5V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V

Compliance

RoHS Status ROHS3 Compliant

Alternative Model

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